EE-SX670A Photo Microsensor

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EE-SX670A Photo Microsensor

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Description

Omron EE-SX670A Slot-type Photo Microsensor

Type:Grooved Type (Standard)
Luminous method:Non-modulated
Sensing method:Through-beam type
Sensing distance:5 mm (slot width)
Operation mode:Dark-ON/Light-ON (selectable)
Standard sensing object:Opaque object (2 x 0.8 mm min.)
Differential distance elements:0.025 mm max.
Light source (Peak wavelength):Infrared LED (940 nm)
Indicator:No incident light (red)
Power supply voltage:5 to 24 VDC ±10% (ripple (p-p)10% max.)
Current consumption:12 mA max. (L terminal open)
Control output (Output type):NPN open-collector output
Control output (Load power supply voltage):5 to 24 VDC
Control output (Load current):100 mA max.
Control output (Residual voltage):0.8 V max. (at 100 mA load current)
0.4 V max. (at 40 mA load current)
Protection circuits:Output short-cut protection
Response frequency elements:1 kHz min. (average 3 kHz)
Illumination on the surface receiver:Fluorescent light: 1000 lx max.
Ambient temperature:Operating: -25 to 55 ℃
Storage: -30 to 80 ℃
Ambient humidity:Operating: 5 to 85% RH
Storage: 5 to 95% RH
Vibration resistance:20 to 2000 Hz, peak acceleration 100 m/s**2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock resistance:500 m/s**2, 3 times each in X, Y, and Z directions
Degree of protection (IEC60529):IP50
Connection method:Connector type (direct soldering possible)
Material:Case: Polybutylene phthalate (PBT)
Emitter/Receiver Cover: Polycarbonate(PC)